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FQB16N25C/FQI16N25C 250V N-Channel MOSFET
June 2006
QFET
FQB16N25C/FQI16N25C
250V N-Channel MOSFET
Features
* 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V * Low gate charge ( typical 41nC) * Low Crss ( typical 68pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
(R)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
D
D
G
S
D2-PAK
FQB Series
I2-PAK
GDS
FQI Series
G
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
Parameter
FQB16N25C / FQI16N25C
250 15.6 9.8 62.4 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C)* Power Dissipation (TC = 25C) - Derate above 25C
410 15.6 13.9 5.5 3.13 139 1.11 -55 to +150 300
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RJC RJA RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient
FQB16N25C / FQI16N25C
0.9 40 62.5
Units
C/W C/W C/W
* When mounted on the minimum pad size recommended (PCB Mount)
(c)2006 Fairchild Semiconductor Corporation
1
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FQB16N25C/FQI16N25C Rev. A1
FQB16N25C/FQI16N25C 250V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQB16N25C FQI16N25C
Device
FQB16N25CTM FQI16N25CTU
Package
D2-PAK I2-PAK
Reel Size
330mm --
Tape Width
24mm --
Quantity
800 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 7.8A VDS = 40 V, ID = 7.8 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min
250 -----2.0 ------
Typ
-0.31 -----0.22 10.5 830 170 68 15 130 135 105 41 5.6 22.7 ---260 2.47
Max Units
--10 100 100 -100 4.0 0.27 -1080 220 89 40 270 280 220 53.5 --15.6 62.4 1.5 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 125 V, ID = 15.6A, RG = 25 ---(Note 4, 5)
---------
VDS = 200 V, ID = 15.6A, VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 15.6 A VGS = 0 V, IS = 15.6 A, dIF / dt = 100 A/s
(Note 4)
--
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.7mH, IAS = 15.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 15.6A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQB16N25C/FQI16N25C Rev. A1
2
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FQB16N25C/FQI16N25C 250V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
Figure 2. Transfer Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
10
1
10
1
150 C
o
25 C
10
0
o
-55 C
o
10
0
Notes : 1. 250 s Pulse Test 2. TC = 25
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
1.5
RDS(ON) [ ], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
1.0
10
1
VGS = 10V
0.5
10
0
150
VGS = 20V
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
Note : TJ = 25
0.0
0
10
20
30
40
50
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
2500
VGS, Gate-Source Voltage [V]
10
VDS = 50V VDS = 125V VDS = 200V
Capacitance [pF]
2000
8
Ciss
1500
Coss Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
0 1
6
1000
4
500
2
Note : ID = 15.6A
0 -1 10
0
10
10
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FQB16N25C/FQI16N25C Rev. A1
3
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FQB16N25C/FQI16N25C 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 7.8 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
16
10
2
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
1 ms
10
1
10 ms DC
ID, Drain Current [A]
100 s
12
8
10
0
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
4
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ ]
Figure 11. Transient Thermal Response Curve
10
0
ZJC(t), Thermal Response
D = 0 .5 0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1
N o te s : 1 . Z J C ( t) = 0 .9 0 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
PDM
s in g le p u ls e
t1
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
FQB16N25C/FQI16N25C Rev. A1
4
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FQB16N25C/FQI16N25C 250V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQB16N25C/FQI16N25C Rev. A1
5
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FQB16N25C/FQI16N25C 250V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQB16N25C/FQI16N25C Rev. A1
6
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FQB16N25C/FQI16N25C 250V N-Channel MOSFET
Mechanical Dimensions
D2-PAK
(0.40) 9.90 0.20 4.50 0.20 1.30 -0.05
+0.10
1.20 0.20
9.20 0.20
15.30 0.30
1.40 0.20
2.00 0.10
0.10 0.15 2.54 0.30 9.20 0.20
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2.40 0.20
4.90 0.20
(0.75)
1.27 0.10 2.54 TYP
0.80 0.10 2.54 TYP 10.00 0.20 (8.00) (4.40)
~ 0
3
+0.10
0.50 -0.05
10.00 0.20 15.30 0.30
(1.75)
(2XR0.45)
0.80 0.10
Dimensions in Millimeters
FQB16N25C/FQI16N25C Rev. A1
7
4.90 0.20
(7.20)
FQB16N25C/FQI16N25C 250V N-Channel MOSFET
Package Dimensions
(Continued)
I2-PAK
9.90 0.20 4.50 0.20
+0.10
(0.40)
1.30 -0.05
1.20 0.20
9.20 0.20 MAX 3.00
(1.46)
13.08 0.20
(0.94)
1.27 0.10
1.47 0.10 0.80 0.10
10.08 0.20
MAX13.40
5 (4 )
0.50 -0.05
+0.10
2.54 TYP
2.54 TYP
2.40 0.20
10.00 0.20
Dimensions in Millimeters
FQB16N25C/FQI16N25C Rev. A1
8
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FQB16N25C/FQI16N25C 250V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST(R) ACExTM ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I19
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
9 FQB16N25C/FQI16N25C Rev. A1
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